Self-aligned implant under transistor gate

Details Self-aligned implant under transistor gate Self-aligned implant under transistor gate

1998-08-26

2000-03-28

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257366, H01L 2701

Patent

active

060435356

ABSTRACT:
The invention comprises a transistor having a self-aligned implant under the gate. The transistor comprises a drain region, a source region opposite the drain region, and a channel region in a semiconductor substrate extending between the source region and the drain region. A front gate is disposed outwardly from the first substrate layer and is separated from the channel region by a dielectric layer. The front gate comprises a first gate layer disposed outwardly from the dielectric layer and a second gate layer disposed outwardly from the first gate layer. A self-aligned implant region is disposed inwardly from the channel region and in approximate vertical alignment with the front gate.

REFERENCES:
patent: 4697198 (1987-09-01), Komori et al.
patent: 5355011 (1994-10-01), Takata
patent: 5512770 (1996-04-01), Hong
patent: 5599728 (1997-02-01), Hu et al.
patent: 5646435 (1997-07-01), Hsu et al.

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