Self-aligned gate fabrication process for silicon carbide static

Details Self-aligned gate fabrication process for silicon carbide static Self-aligned gate fabrication process for silicon carbide static

1996-07-30

1998-09-15

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

438931, H01L 21337

Patent

active

058077731

ABSTRACT:
A method of aligning a gate and a source of a silicon carbide static induction transistor comprising the steps of depositing an oxide layer over the transistor, forming oxide spacers from the oxide layer where the oxide spacers are adjacent the source, depositing a metal layer over the transistor and removing the oxide spacers so that the resulting gates are accurately aligned with the source.

REFERENCES:
patent: 5260227 (1993-11-01), Farb
patent: 5612547 (1997-03-01), Clarke
Clarke, R.C. et al., 30W VHF 6H-SIC Power Static Induction Transistor, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, New York, Aug. 7-9, 1995, 7 Aug. 1995, Institute Of Electrical and Electronics Engineers, pp. 47-55, XP000626601, see p. 49, figures 3-6.

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