Self-aligned epitaxially grown bipolar transistor

Details Self-aligned epitaxially grown bipolar transistor Self-aligned epitaxially grown bipolar transistor

2011-02-08

2011-02-08

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S312000, C438S341000, C438S360000, C438S363000, C257SE21696

Reexamination Certificate

active

07883954

ABSTRACT:
The illumination system has a light source (1) with a plurality of light emitters (R, G, B). The light emitters comprise at least a first light-emitting diode of a first primary color and at least a second light-emitting diode of a second primary color, the first and the second primary colors being distinct from each other. The illumination system has a facetted light-collimator (2) for collimating light emitted by the light emitters. The facetted lightcollimator is arranged along a longitudinal axis (25) of the illumination system. Light propagation in the facetted light-collimator is based on total internal reflection or on reflection at a reflective coating provided on the facets of the facetted light-collimator. The facetted light-collimator merges into a facetted light-reflector (3) at a side facing away from the light source. The illumination system further comprises a light-shaping diffuser (17). The illumination system emits light with a uniform spatial and spatio-angular color distribution.

REFERENCES:
patent: 5227654 (1993-07-01), Momose et al.
patent: 6846710 (2005-01-01), Yi et al.
patent: 2005/0079678 (2005-04-01), Verma et al.

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