Self-aligned element isolation film structure in a flash...

Details Self-aligned element isolation film structure in a flash... Self-aligned element isolation film structure in a flash...

2007-12-25

2007-12-25

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S423000, C257SE21540

Reexamination Certificate

active

11023277

ABSTRACT:
A self-aligned element isolation film structure in a flash memory cell and a forming method thereof are disclosed. An example method of forming a self-aligned element isolation film structure in a flash memory cell forms an insulating layer on a semiconductor substrate and forms a floating gate pattern on the insulating layer. The example method selectively implants ions in a portion of the insulating layer exposed by the floating gate pattern and forms a self-aligned element isolation film on the floating gate pattern by oxidizing and growing the portion of the insulating layer to which the ion implantation is performed.

REFERENCES:
patent: 5907783 (1999-05-01), Kim et al.
patent: 6316804 (2001-11-01), Templeton et al.
patent: 6369421 (2002-04-01), Xiang et al.

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