Self-aligned edge control in silicon on insulator

Details Self-aligned edge control in silicon on insulator Self-aligned edge control in silicon on insulator

1995-03-21

1999-01-26

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438297, 438298, 438410, 438517, H01L 21336

Patent

active

058638237

ABSTRACT:
An improved process and structure for channel stop in silicon on insulator using LOCOS isolation are disclosed. Advantages include decreased ion dose requirements; reduced processing time; smaller .DELTA.W characteristics, thus, small transistor size and more precise process control over the edge of a MOSFET. The process also makes possible a wide range of transistor design capabilities and improved transistor operating parameters.

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