Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-14
2006-03-14
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S528000, C438S524000
Reexamination Certificate
active
07012005
ABSTRACT:
In accordance with the present invention, a trench MOSFET is formed by creating a trench in a semiconductor substrate. A portion of either a side wall of the trench or the bottom of the trench is implanted with an implant species. An insulating layer is then grown overlying the bottom and side wall of the trench. The implant species is selected such that the insulating layer grows more quickly on the bottom of the trench than on the side wall of the trench, resulting in a thicker insulating layer in the bottom of the trench than on the trench side walls.
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Chen Kuo-in
Darwish Mohamed N.
Giles Frederick P.
Lichtenberger Karl
Lui Kam Hong
Fourson George
Leiterman Rachel V.
Patent Law Group LLP
Siliconix Incorporated
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