Self-aligned dielectric cap

Details Self-aligned dielectric cap Self-aligned dielectric cap

2011-01-04

2011-01-04

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S699000, C257SE21311

Reexamination Certificate

active

07863196

ABSTRACT:
A method of forming a dielectric layer includes providing a substrate that has a copper region and a non-copper region. The substrate is etched to remove any copper oxides from the copper region. A dielectric cap is then selectively formed over the copper region of the substrate so that little or no dielectric cap is formed over the non-copper region of the substrate.

REFERENCES:
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patent: 7276441 (2007-10-01), Cui et al.
patent: 2004/0056319 (2004-03-01), Kuo et al.
patent: 2006/0281299 (2006-12-01), Chen et al.
patent: 2008/0254600 (2008-10-01), Liu et al.
Chinese Patent Office, Office Action mailed May 8, 2009, in Application No. 2007103059191, 5 pages.
Chinese Patent Office, Office Action mailed Jan. 8, 2010, Patent Application No. 2007/103059191, 6 pages.

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