Self-aligned deep trench DRAM array device

Details Self-aligned deep trench DRAM array device Self-aligned deep trench DRAM array device

1999-03-03

2000-10-31

Hardy, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438244, 438248, 438239, 438386, 438387, 438585, 257301, H01L 218242

Patent

active

061401757

ABSTRACT:
An integrated circuit and a method of manufacturing an integrated circuit comprises forming an insulator over a substrate, forming a trench in the insulator and the substrate, undercutting the insulator to form a gate conductor opening between the substrate and the insulator adjacent the trench, and forming a gate oxide and gate conductor in the gate conductor opening.

REFERENCES:
patent: 4645564 (1987-02-01), Morie et al.
patent: 4728623 (1988-03-01), Lu et al.
patent: 4816884 (1989-03-01), Hwang et al.
patent: 4939104 (1990-07-01), Pollack et al.
patent: 5156992 (1992-10-01), Teng et al.
patent: 5170234 (1992-12-01), Baglee et al.
patent: 5216265 (1993-06-01), Anderson et al.
patent: 5360785 (1994-11-01), Yoshida et al.
patent: 5369049 (1994-11-01), Acocella et al.
patent: 5380674 (1995-01-01), Kimura et al.
patent: 5395786 (1995-03-01), Hsu et al.
patent: 5422294 (1995-06-01), Noble, Jr.
patent: 5461248 (1995-10-01), Jun
patent: 5563433 (1996-10-01), Nagata et al.
patent: 5614431 (1997-03-01), DeBrosse
patent: 5670805 (1997-09-01), Hammerl et al.
patent: 6008104 (1999-12-01), Schrems
patent: 6037210 (2000-03-01), Leas

Affiliated with

Also associated with

Rating

Self-aligned deep trench DRAM array device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned deep trench DRAM array device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned deep trench DRAM array device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2050555