Self-aligned contact structure with raised source and drain

Details Self-aligned contact structure with raised source and drain Self-aligned contact structure with raised source and drain

2005-03-22

2005-03-22

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06869850

ABSTRACT:
In one embodiment, a transistor comprises raised structures over a source region and a drain region. The raised source structures may comprise selectively deposited metal, such as selective tungsten. A self-aligned contact structure formed through a dielectric layer may provide an electrical connection between an overlying structure (e.g., an interconnect line) and the source or drain region. The transistor may further comprise a gate stack having a capping layer over a metal.

REFERENCES:
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patent: 5798278 (1998-08-01), Chan et al.
patent: 5804846 (1998-09-01), Fuller
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6724057 (2004-04-01), Ibara et al.
Chang, Hsiao-Yung “Modeling and Simulation of a Tungten Chemical Vapor Deposition Reactor” Aug. 1, 2000 (Abstract) pp. 1-154, University of Maryland, College Park.
Kobayashi, Nobuyoshi, et al. “Study on mechanism of selective chemical vapor deposition of tungsten using in situ infrared spectroscopy and Auger electron spectroscopy”, 1991, pp. 1013-1019, vol. 69, No. 2, Journal of Applied Physics; Japan.

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