Self aligned contact structure for trench device

Details Self aligned contact structure for trench device Self aligned contact structure for trench device

2006-07-25

2006-07-25

Tran, Minhloan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S142000, C438S197000, C438S268000, C257S213000, C257S288000, C257S327000, C257S329000, C257S330000

Reexamination Certificate

active

07081388

ABSTRACT:
A fabrication process for a trench type power semiconductor device includes forming a mask layer with openings over a semiconductor surface. Through the openings of the mask, trenches with gates are then formed in the semiconductor body. Thereafter, insulation plugs are formed atop the gates and into the openings of the mask layer. The mask layer is then removed, leaving the insulation plugs extending above the semiconductor surface. Source implant regions are then formed between the trenches. Thereafter, spacers are formed along the sides of the insulation plugs, covering portions of the source implant regions adjacent the trenches. Using these spacers as masks, the exposed portions of the source implant regions are then etched and removed. The remaining source implant regions under the spacers are then driven to form source regions. Thereafter, shallow high conductivity contact regions are formed in the etched regions. Source and drain contacts are then formed over the device.

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A New Power W-Gated Trench MOSFET (WMOSFET) with High Switching Performance, Mohamed Darwish et al., pp. 24-27, ISPSD 2003, Apr. 14-17, Cambridge, United Kingdom.

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