Self-aligned contact process implementing bias compensation...

Details Self-aligned contact process implementing bias compensation... Self-aligned contact process implementing bias compensation...

2005-03-01

2005-03-01

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S007000, C438S009000, C438S710000, C216S060000

Reexamination Certificate

active

06861362

ABSTRACT:
A method for enhancing the fabrication process of a self-aligned contact (SAC) structure is provided. The method includes forming a transistor structure on a surface of a substrate. The method also includes forming a dielectric layer directly over the surface of the substrate without forming an etch stop layer on the surface of the substrate. Also included in the method is plasma etching a contact hole through the dielectric layer in a plasma processing chamber. The method also includes monitoring a bias compensation voltage of the plasma processing chamber during the plasma etching process and discontinuing the plasma etching process upon detecting an endpoint signaling change in the bias compensation voltage.

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patent: 5843815 (1998-12-01), Liaw
patent: 5854135 (1998-12-01), Ko
patent: 5871658 (1999-02-01), Tao et al.
patent: 6228278 (2001-05-01), Winniczek et al.

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