Self aligned contact etch using difluoromethane and trifluoromet

Details Self aligned contact etch using difluoromethane and trifluoromet Self aligned contact etch using difluoromethane and trifluoromet

1997-10-23

1999-10-12

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

216 67, 216 74, 216 79, 438705, 438706, 438710, 438717, 438723, 438724, 438738, 438740, 438743, 438744, H01L 213213

Patent

active

059650354

ABSTRACT:
An oxide etch process that is highly selective to nitride, thereby being beneficial for a self-aligned contact etch of silicon dioxide to an underlying thin layer of silicon nitride. The process uses difluoromethane (CH.sub.2 F.sub.2) for its strong polymer forming and a greater amount of trifluoromethane (CHF.sub.3) for its strong etching, and with a high diluent fraction of argon (Ar). The etch process is performed at a low pressure of about 20 milliTorr in a high-density plasma etching chamber.

REFERENCES:
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5423945 (1995-06-01), Marks et al.
Becker et al., "A method of obtaining high oxide to nitride selectivity in an MERIE reactor," 1046b Extended Abstracts, Spring Meeting, Honolulu (1993). Abstract No. 251. pp. 367-368.

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