Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-13
2007-02-13
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S259000, C438S201000, C438S211000, C438S216000, C438S261000, C438S593000, C438S596000, C438S740000, C438S742000, C257SE21626
Reexamination Certificate
active
11148342
ABSTRACT:
A self-aligned conductive spacer process for fabricating sidewall control gates on both sides of a floating gate for high-speed RAM applications, which can well define dimensions and profiles of the sidewall control gates. A conductive layer is formed on the dielectric layer to cover a floating gate patterned on a semiconductor substrate. Oxide spacer are formed on the conductive layer adjacent to the sidewalls of the floating gate. Performing an anisotropic etch process on the conductive layer and using the oxide spacers as a hard mask, a conductive spacers are self-aligned fabricated at both sides of the floating gate, serving as sidewall control gates.
REFERENCES:
patent: 6570213 (2003-05-01), Wu
patent: 6689658 (2004-02-01), Wu
Hwang Jiunn-Ren
Lee Tsung-Lin
Lee Tzyh-Cheang
Yang Fu-Liang
Ahmadi Mohsen
Birch & Stewart Kolasch & Birch, LLP
Lebentritt Michael
Taiwan Semiconductor Manufacturing Co. Ltd.
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