Self-aligned buried strap process using doped HDP oxide

Details Self-aligned buried strap process using doped HDP oxide Self-aligned buried strap process using doped HDP oxide

2005-09-20

2005-09-20

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S246000, C438S244000, C438S392000, C438S389000, C438S387000

Reexamination Certificate

active

06946345

ABSTRACT:
The invention provides a trench storage structure that includes a substrate having a trench, a capacitor conductor in the lower part of the trench, a conductive node strap in the trench adjacent the capacitor conductor, a trench top oxide above the capacitor conductor, and a conductive buried strap in the substrate adjacent the trench top oxide. The trench top oxide includes a doped trench top oxide layer above the conductive strap, and an undoped trench top oxide layer above the doped trench top oxide layer.

REFERENCES:
patent: 6013584 (2000-01-01), M'Saad
patent: 6090660 (2000-07-01), Noble, Jr.
patent: 6242310 (2001-06-01), Divakaruni et al.
patent: 6420750 (2002-07-01), Divakaruni et al.
patent: 6432774 (2002-08-01), Heo et al.
patent: 6455886 (2002-09-01), Mandelman et al.
patent: 6509599 (2003-01-01), Wurster et al.
patent: 6534359 (2003-03-01), Heo et al.
patent: 6555862 (2003-04-01), Mandelman et al.
patent: 6566192 (2003-05-01), Lin
patent: 6696717 (2004-02-01), Chang et al.
patent: 2002/0196651 (2002-12-01), Weis

Affiliated with

Also associated with

Rating

Self-aligned buried strap process using doped HDP oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned buried strap process using doped HDP oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned buried strap process using doped HDP oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3379272