Self-aligned bipolar semiconductor device and fabrication...

Details Self-aligned bipolar semiconductor device and fabrication... Self-aligned bipolar semiconductor device and fabrication...

2008-04-15

2008-04-15

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S692000, C257SE21371

Reexamination Certificate

active

07358132

ABSTRACT:
A self-aligned bipolar semiconductor device and a fabrication method thereof are provided. After a silicon layer and a collector contact are formed on a buried collector layer, an oxide dummy pattern is formed on the silicon layer to define both an extrinsic base and an intrinsic base. A polycide layer used as the extrinsic base is formed thereon and selectively removed to expose the dummy pattern. After the exposed dummy pattern is removed, an epitaxial layer used as the intrinsic base is grown on both the silicon layer and the polycide layer, and selectively removed from the top of the polycide layer. An oxide layer and a nitride layer are deposited in sequence thereon, and the nitride layer is blanket-etched to form spacers defining an emitter. After a photoresist pattern is formed to mostly cover the oxide layer and partly expose the oxide layer between the spacers over the intrinsic base, the oxide layer is etched by using the photoresist pattern and the spacers as an etch mask.

REFERENCES:
patent: 6940149 (2005-09-01), Divakaruni et al.
patent: 6972443 (2005-12-01), Khater

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