Self-aligned bipolar junction transistors

Details Self-aligned bipolar junction transistors Self-aligned bipolar junction transistors

2011-01-25

2011-01-25

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S204000, C438S205000, C257SE27046

Reexamination Certificate

active

07875513

ABSTRACT:
A plurality of bipolar transistors are formed by forming a common conduction region, a plurality of control regions extending each in an own active areas on the common conduction region, a plurality of silicide protection strips, and at least one control contact region. Silicide regions are formed on the second conduction regions and the control contact region. The second conduction regions may be formed by selectively implanting a first conductivity type dopant areas on a first side of selected silicide protection strips. The control contact region is formed by selectively implanting an opposite conductivity type dopant on a second side of the selected silicide protection strips.

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