Selective thin film etch process

Details Selective thin film etch process Selective thin film etch process

1987-03-20

1988-12-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 20419237, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

047938978

ABSTRACT:
A plasma process using a reactant gas mixture of fluorinated etching gas and oxygen for selectively etching a thin film of material such as silicon nitride with high selectivity for a silicon oxide underlayer and, preferably, for a photoresist overlayer mask.

REFERENCES:
patent: 4303467 (1981-12-01), Scornavacca et al.
patent: 4568410 (1986-02-01), Thornquist
patent: 4668365 (1987-05-01), Foster et al.

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