Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-13
2005-09-13
Phan, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S366000, C438S595000
Reexamination Certificate
active
06943077
ABSTRACT:
A method of forming spacers with different widths on a semiconductor substrate, includes the steps of disposing a first spacer layer over the substrate, defining the first spacer layer into a plurality of spacers of a first width, and disposing a second spacer layer selectively over the first spacer layer of a number of the spacers preselected for the second spacer layer, the predetermined number of the spacers with the second spacer layer each having a second width which is different from the first width.
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Lei Ming-Ta
Lin Cheng-Chung
Lin Chia-Hui
Lin Yih-Shung
Liu Ai-Sen
Duane Morris LLP
Le Thao X.
Phan Long
Taiwan Semiconductor Manufacturing Co. Ltd.
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