Selective silicon-on-insulator isolation structure and method

Details Selective silicon-on-insulator isolation structure and method Selective silicon-on-insulator isolation structure and method

2011-04-12

2011-04-12

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257S374000, C257S347000, C257SE21564

Reexamination Certificate

active

07923786

ABSTRACT:
A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

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