Selective silicon etch process

Details Selective silicon etch process Selective silicon etch process

2011-08-09

2011-08-09

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S589000, C438S745000, C438S753000, C257SE21214, C257SE21219, C257SE21223

Reexamination Certificate

active

07994062

ABSTRACT:
A process for etching a silicon layer disposed on a substrate, including anisotropically etching a first trench in the silicon layer; selectively anisotropic wet etching silicon surfaces in the first trench, the wet etching comprising exposing the silicon surfaces to an aqueous composition including an aromatic tri(lower)alkyl quaternary onium hydroxide, and an unsymmetrical tetraalkyl quaternary phosphonium salt; in which the wet etching etches (110) and (100) planes of the silicon layer at about equal rates and preferentially to the (111) plane to form an enlarged trench having a sidewall in the (111) plane. A silicon alloy may be epitaxially deposited in the thus-produced trench as part of a process of introducing stress into at least a portion of the silicon layer.

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