Selective silicide process

Details Selective silicide process Selective silicide process

2011-04-19

2011-04-19

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S682000, C438S755000, C257SE21632

Reexamination Certificate

active

07927942

ABSTRACT:
A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations.

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