Selective silicide blocking

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S674000, C438S586000, C438S683000

Reexamination Certificate

active

06881672

ABSTRACT:
A selectively silicided semiconductor structure and a method for fabricating same is disclosed herein. The semiconductor structure has silicide present on the polysilicon line between the N+ diffusion or N+ active area and the P+ diffusion or active area at the N+/P+ junction of the polysilicon line, and silicide is not present on the N+ active area and the P+ active area. The presence of this selective silicidation creates a beneficial low-resistance connection between the N+ region of the polysilicon line and the P+ region of the polysilicon line. The absence of silicidation on the N+ and P+ active areas, specifically on the PFET and NFET structures, prevents current leakage associated with the silicidation of devices.

REFERENCES:
patent: 4656731 (1987-04-01), Lam et al.
patent: 5633523 (1997-05-01), Kato
patent: 5635426 (1997-06-01), Hayashi et al.
patent: 5973382 (1999-10-01), Burgener et al.
patent: 6020242 (2000-02-01), Tsai et al.
patent: 6051864 (2000-04-01), Hodges et al.
patent: 6057215 (2000-05-01), Kitano
patent: 6160282 (2000-12-01), Merrill
patent: 6194258 (2001-02-01), Wuu
patent: 6214656 (2001-04-01), Liaw
patent: 6521529 (2003-02-01), Ngo et al.
patent: 6521952 (2003-02-01), Ker et al.
patent: 20020020886 (2002-02-01), Rockett

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Selective silicide blocking does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective silicide blocking, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective silicide blocking will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3432073

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.