Selective silicidation scheme for memory devices

Details Selective silicidation scheme for memory devices Selective silicidation scheme for memory devices

2005-02-01

2005-02-01

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S250000, C438S253000, C438S386000, C438S393000, C438S396000, C438S682000, C438S664000, C438S683000

Reexamination Certificate

active

06849495

ABSTRACT:
A memory device and method of manufacturing thereof, wherein a silicide material is selectively formed over active regions of a memory device. A silicide material may also be formed on the top surface of wordlines adjacent the active regions during the selective silicidation process. A single nitride insulating layer is used, and portions of the workpiece are covered with photoresist during the formation of the silicide material.

REFERENCES:
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 4983544 (1991-01-01), Lu et al.
patent: 5059549 (1991-10-01), Furuhata
patent: 5200354 (1993-04-01), Om et al.
patent: 5545581 (1996-08-01), Armacost et al.
patent: 6008104 (1999-12-01), Schrems
patent: 6037107 (2000-03-01), Thackeray et al.
patent: 6258659 (2001-07-01), Gruening et al.
patent: 6281067 (2001-08-01), Chien et al.
patent: 6303451 (2001-10-01), Zhang et al.
patent: 6426247 (2002-07-01), Divakaruni et al.
patent: 6440791 (2002-08-01), Gau
patent: 6482699 (2002-11-01), Hu et al.

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