Selective salicidation methods

Details Selective salicidation methods Selective salicidation methods

2006-03-21

2006-03-21

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S651000, C438S655000

Reexamination Certificate

active

07015140

ABSTRACT:
Methods for selective salicidation of a semiconductor device. The invention implements a chemical surface pretreatment by immersion in ozonated water H2O prior to metal deposition. The pretreatment forms an interfacial layer that prevents salicidation over an n-type structure. As a result, the invention does not add any additional process steps to the conventional salicidation processing.

REFERENCES:
patent: 5342798 (1994-08-01), Huang
patent: 6387804 (2002-05-01), Foster
patent: 2002/0111021 (2002-08-01), Paton et al.

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