Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-09-29
2010-06-15
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S644000, C438S650000, C438S653000, C438S675000, C438S687000, C257SE21171, C257SE21577, C257SE21584, C257SE21586
Reexamination Certificate
active
07737028
ABSTRACT:
Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method for forming layers on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a copper-containing surface and a dielectric surface, exposing the substrate to a ruthenium precursor to selectively form a ruthenium-containing film over the copper-containing surface while leaving exposed the dielectric surface, and depositing a copper bulk layer over the ruthenium-containing film.
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Chung Hua
Gopalraja Praburam
Wang Rongjun
Yu Jick M.
Applied Materials Inc.
Lindsay, Jr. Walter L
Patterson & Sheridan
Pompey Ron
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