Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-02-22
2005-02-22
Webb, Gregory (Department: 1751)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C510S175000, C252S079100
Reexamination Certificate
active
06858540
ABSTRACT:
A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid in a dielectric layer and including a Ta-containing metal diffusion barrier layer, comprises applying an aqueous liquid composition to the workpiece surface during CMP or to the polishing pad utilized for performing the CMP, the composition comprising at least one reducing agent for reducing transition metal ions to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor, and water, and optionally includes ions of at least one transition metal, e.g., Cu and Fe ions. According to another embodiment, the aqueous liquid composition contains Ag ions and the at least one reducing agent is omitted.
REFERENCES:
patent: 4851201 (1989-07-01), Heap et al.
patent: 4920031 (1990-04-01), Ohno et al.
patent: 5053339 (1991-10-01), Patel
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5693563 (1997-12-01), Teong
patent: 5735963 (1998-04-01), Obeng
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5842910 (1998-12-01), Krywanczyk et al.
patent: 5893796 (1999-04-01), Birang et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 5981454 (1999-11-01), Small
patent: 5985748 (1999-11-01), Watts et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6074949 (2000-06-01), Schonauer et al.
patent: 6083840 (2000-07-01), Mravic et al.
patent: 6117775 (2000-09-01), Kondo et al.
patent: 6117783 (2000-09-01), Small et al.
patent: 6126853 (2000-10-01), Kaufman et al.
patent: 6136714 (2000-10-01), Schutz
patent: 6143656 (2000-11-01), Yang et al.
patent: 6156661 (2000-12-01), Small
patent: 6183686 (2001-02-01), Bardus et al.
patent: 6218290 (2001-04-01), Schonauer et al.
patent: 6258721 (2001-07-01), Li et al.
patent: 6271416 (2001-08-01), Takagaki et al.
patent: 6315803 (2001-11-01), Ina et al.
patent: 6375559 (2002-04-01), James et al.
patent: 6468913 (2002-10-01), Pasqualoni et al.
patent: 6709316 (2004-03-01), Sun et al.
patent: 20020090820 (2002-07-01), Sun et al.
patent: 1 006 166 (2000-06-01), None
patent: 1 011 131 (2000-06-01), None
patent: 1 085 067 (2001-03-01), None
patent: 1 104 020 (2001-05-01), None
patent: 1 125 999 (2001-08-01), None
patent: 1 603 558 (2001-06-01), None
patent: 2001-127018 (2001-05-01), None
patent: 2001-139937 (2001-05-01), None
patent: WO 9804646 (1998-02-01), None
patent: WO 9836045 (1998-08-01), None
patent: 9841671 (1998-09-01), None
patent: 9849723 (1998-11-01), None
patent: WO 0000561 (2000-01-01), None
patent: 0002238 (2000-01-01), None
patent: WO 0024842 (2000-05-01), None
patent: 0030159 (2000-05-01), None
US 5,985,755, 11/1999, Bajaj et al. (withdrawn)
Written Opinion from PCT International Preliminary Examining Authority for US/02/00062, dated May 12, 2003.
Partial Search Report (Form PCT/ISA/206—Annex) for PCT/US02/22126, dated Dec. 6, 2002.
PCT International Search Report from International Application No. PCT/US01/50150, Dated Sep. 23, 2002.
International Search Report dated Jul. 8, 2002 for PCT/US02/00062.
U.S. Appl. No. 09/569,968, filed May 11, 2000, (Sun, et al.).
U.S. Appl. No. 09/968,863, filed Oct. 27, 2000, (Tsai, et al.).
U.S. Appl. No. 09/968,864, filed Oct. 27, 2000, (Sun et al.).
U.S. Appl. No. 09/755,717, filed Jan. 5, 2001, (Sun, et al.).
U.S. Appl. No. 10/187,857, filed Jun. 27, 2002, (Tsai, et al.).
U.S. Appl. No. 10/193,810, filed Jul. 11, 2002, (Tsai, et al.).
Li Shijian
Redeker Fred C.
Sun Lizhong
Tsai Stan
Applied Materials Inc.
Moser Patterson & Sheridan
Webb Gregory
LandOfFree
Selective removal of tantalum-containing barrier layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selective removal of tantalum-containing barrier layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective removal of tantalum-containing barrier layer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3473638