Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-30
2007-10-30
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S344000, C257S346000, C257S408000, C257SE29266
Reexamination Certificate
active
11268100
ABSTRACT:
A method for doping a polysilicon gate conductor, without implanting the substrate in a manner that would effect source/drain formation is provided. The inventive method comprises forming at least one polysilicon gate region atop a substrate; forming oxide seed spacers abutting the polysilicon gate; forming source/drain oxide spacers selectively deposited on the oxide seed spacers by liquid phase deposition, and implanting at least one polysilicon gate region, wherein the source/drain oxide spacers protect an underlying portion of the substrate. Multiple gate regions may be processed on a single substrate using conventional patterning. A block-mask provided by patterned photoresist can be used prior to implantation to pre-select the substrate area for gate conductor doping with one dopant type.
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Chou Anthony I.
Furukawa Toshiharu
Holmes Steven J.
Cai Yuanman
Thomas Toniae M
Wilczewski Mary
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