Selective plasma processing method

Details Selective plasma processing method Selective plasma processing method

2008-03-21

2010-10-12

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C118S7230AN, C257SE21283, C257SE21301, C257SE21302, C438S776000, C438S792000

Reexamination Certificate

active

07811945

ABSTRACT:
A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride layer and to form a silicon oxide film. Further, the ratio of a thickness of a silicon oxynitride film formed within the silicon nitride layer to a thickness of the silicon oxide film formed by the oxidization is equal to or smaller than 20%.

REFERENCES:
patent: 2003/0194874 (2003-10-01), Ouchi
patent: 2003/0224616 (2003-12-01), Ogawa et al.
patent: 2004/0112541 (2004-06-01), Ishii et al.
patent: 1494737 (2004-05-01), None
patent: 2002-222941 (2002-08-01), None
patent: 2004-193409 (2004-07-01), None
patent: 1996-9985 (1996-07-01), None

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