Selective oxidation of gate stack

Details Selective oxidation of gate stack Selective oxidation of gate stack

2007-03-13

2007-03-13

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S719000, C438S720000

Reexamination Certificate

active

10313048

ABSTRACT:
A method of forming a semiconductor structure comprises oxidizing a stack, to form sidewall oxide in contact with sides of the stack. The stack is on a semiconductor substrate, the stack includes a gate layer, comprising silicon; a metallic layer, on the gate layer; and an etch-stop layer, on the metallic layer. The sidewall oxide in contact with the metallic layer is thinner than the sidewall oxide in contact with the gate layer.

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