Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-21
2006-11-21
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000
Reexamination Certificate
active
07138691
ABSTRACT:
A semiconductor structure includes thin gate dielectrics that have been selectively nitrogen enriched. The amount of nitrogen introduced is sufficient to reduce or prevent gate leakage and dopant penetration, without appreciably degrading device performance. A lower concentration of nitrogen is introduced into pFET gate dielectrics than into nFET gate dielectrics. Nitridation may be accomplished selectively by various techniques, including rapid thermal nitridation (RTN), furnace nitridation, remote plasma nitridation (RPN), decoupled plasma nitridation (DPN), well implantation and/or polysilicon implantation.
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Burnham Jay S.
Ellis-Monaghan John J.
Nakos James S.
Quinlivan James J.
Greenblum & Bernstein P.L.C.
Prenty Mark V.
Sabo, Esq. William
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