Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-12
2006-09-12
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S411000
Reexamination Certificate
active
07105889
ABSTRACT:
A method of forming a CMOS structure, and the device produced therefrom, having improved threshold voltage and flatband voltage stability. The inventive method includes the steps of providing a semiconductor substrate having an nFET region and a pFET region; forming a dielectric stack atop the semiconductor substrate comprising an insulating interlayer atop a high k dielectric; removing the insulating interlayer from the nFET region without removing the insulating interlayer from the pFET region; and providing at least one gate stack in the pFET region and at least one gate stack in the nFET region. The insulating interlayer can be AlN or AlOxNy. The high k dielectric can be HfO2, hafnium silicate or hafnium silicon oxynitride. The insulating interlayer can be removed from the nFET region by a wet etch including a HCl/H2O2peroxide solution.
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Bojarczuk, Jr. Nestor A.
Cabral, Jr. Cyril
Cartier Eduard A.
Copel Matthew W.
Frank Martin M.
Huynh Andy
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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