Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257SE21639
Reexamination Certificate
active
07928514
ABSTRACT:
The present invention provides a semiconductor structure including a semiconductor substrate having a plurality of source and drain diffusion regions located therein, each pair of source and drain diffusion regions are separated by a device channel. The structure further includes a first gate stack of pFET device located on top of some of the device channels, the first gate stack including a high-k gate dielectric, an insulating interlayer abutting the gate dielectric and a fully silicided metal gate electrode abutting the insulating interlayer, the insulating interlayer includes an insulating metal nitride that stabilizes threshold voltage and flatband voltage of the p-FET device to a targeted value and is one of aluminum oxynitride, boron nitride, boron oxynitride, gallium nitride, gallium oxynitride, indium nitride and indium oxynitride. A second gate stack of an nFET devices is located on top remaining device channels, the second gate stack including a high-k gate dielectric and a fully silicided gate electrode located directly atop the high-k gate dielectric.
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Bojarczuk, Jr. Nestor A.
Cabral, Jr. Cyril
Cartier Eduard A.
Copel Matthew W.
Frank Martin M.
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
Trinh Michael
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