Selective growth method, and semiconductor light emitting...

Details Selective growth method, and semiconductor light emitting... Selective growth method, and semiconductor light emitting...

2005-11-29

2005-11-29

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S503000, C438S479000, C438S481000, C438S930000, C438S974000, C117S089000, C117S095000, C117S104000, C117S952000

Reexamination Certificate

active

06969670

ABSTRACT:
At the time of selective growth of an active layer on a substrate, crystal is previously grown in an active layer non-growth region, and the active layer is grown in an active layer selective growth region. With this configuration, a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active layer selective growth region is kept nearly at a constant value over the entire period of growth of the active layer, to eliminate degradation of characteristics of the device due to a variation in growth rate of the active layer. In particular, the selective growth method is effective in fabrication of a semiconductor light emitting device including a cladding layer, a guide layer, and an active layer, each of which is formed by selective growth, wherein the active layer has multiple quantum wells.

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Translation of JP 2000-174391.

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