4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With heterojunction

Goshi Biwa

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Crystal firm, crystal substrate, and semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate

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Crystal growth method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Crystal growth method for nitride semiconductor and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Crystal growth method for nitride semiconductor and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Display unit and semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2263868

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