Selective germanium deposition for pillar devices

Details Selective germanium deposition for pillar devices Selective germanium deposition for pillar devices

2008-01-15

2010-06-29

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S249000, C438S253000, C438S257000, C438S283000, C438S299000, C257S295000, C257S300000, C257S302000, C257S330000, C257SE21576, C257SE21581

Reexamination Certificate

active

07745312

ABSTRACT:
A method of making a pillar device includes providing an insulating layer having an opening, and selectively depositing germanium or germanium rich silicon germanium semiconductor material into the opening to form the pillar device.

REFERENCES:
patent: 5891778 (1999-04-01), Wen
patent: 5915167 (1999-06-01), Leedy
patent: 5937280 (1999-08-01), Wen
patent: 6429449 (2002-08-01), Gonzalez et al.
patent: 6750091 (2004-06-01), Gonzalez et al.
patent: 7285464 (2007-10-01), Herner et al.
patent: 2002/0163027 (2002-11-01), Skotnicki et al.
patent: 2004/0157354 (2004-08-01), Kuriyama et al.
patent: 2005/0012119 (2005-01-01), Herner et al.
patent: 2005/0052915 (2005-03-01), Herner et al.
patent: 2005/0062079 (2005-03-01), Wu et al.
patent: 2005/0098800 (2005-05-01), Herner et al.
patent: 2006/0087005 (2006-04-01), Herner
patent: 2006/0284237 (2006-12-01), Park et al.
patent: 2006/0292301 (2006-12-01), Herner
patent: 2007/0086235 (2007-04-01), Kim et al.
patent: 2007/0090425 (2007-04-01), Kumar et al.
patent: 2007/0164309 (2007-07-01), Kumar et al.
patent: 2008/0078984 (2008-04-01), Park et al.
patent: 04 067671 (1992-03-01), None
patent: 06 334139 (1994-12-01), None
patent: 100766504 (2007-10-01), None
patent: WO 2007/067448 (2007-06-01), None
U.S. Appl. No. 11/444,936, filed Apr. 31, 2006, Radigan et al.
U.S. Appl. No. 11/819,078, filed Jun. 25, 2007, Herner.
Herner, S.B., “Low Temperature Deposition and Crystallization of Large-Grained Ge Films on TiN”, Electrochemical and Solid-State Letters, vol. 9(5), (2006), pp. G161-G163.
Herner, S.B. et al., “Homogeneous Tungsten Chemical Vapor Deposition on Silane Pretreated Titanium Nitride”, Electrochemical and Solid-State Letters, vol. 2(8), (1999), pp. 398-400.
International Search Report and Written Opinion, mailed Jun. 5, 2009, received in International Application No. PCT/US2009/030937.

Affiliated with

Also associated with

Rating

Selective germanium deposition for pillar devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective germanium deposition for pillar devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective germanium deposition for pillar devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4219953