Selective formation of metal gate for dual gate oxide...

Details Selective formation of metal gate for dual gate oxide... Selective formation of metal gate for dual gate oxide...

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S241000, C438S253000, C438S637000, C257S905000, C257S906000, C257S908000

Reexamination Certificate

active

06872627

ABSTRACT:
A new processing sequence is provided for the creation of a metal gate electrode. At least two polysilicon gate electrodes are provided over the surface of a substrate, these polysilicon gate electrodes having a relatively thick layer of gate dielectric making these polysilicon gate electrodes suitable for high-voltage applications. The two polysilicon gate electrodes are divided into a first and a second gate electrode, both gate electrodes are imbedded in a layer of Intra Metal Dielectric (IMD). The first gate electrode is removed by applying a lift-off process to this first gate electrode, creating an opening in the layer of IMD. The second gate structure is shielded by a photoresist mask during the removal of the first gate electrode. A metal gate electrode is created in the opening created in the layer of IMD, using a thin layer of gate dielectric.

REFERENCES:
patent: 5960270 (1999-09-01), Misra et al.
patent: 6043157 (2000-03-01), Gardner et al.
patent: 6087231 (2000-07-01), Xiang et al.
patent: 6117725 (2000-09-01), Huang
patent: 6159782 (2000-12-01), Xiang et al.

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