Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-08-14
2007-08-14
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C156S345340, C156S345380, C156S345440, C156S345450, C204S298340, C216S041000, C216S067000, C216S070000, C216S072000, C219S121400, C315S111210, C438S695000, C438S710000, C438S712000, C438S714000, C438S718000, C438S719000, C438S724000, C438S740000, C438S743000, C438S744000, C438S963000
Reexamination Certificate
active
10632873
ABSTRACT:
The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å/min.
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Chae Heeyeop
Chiu Joey
Kim Yun-sang
Shin Neungho
Tian Fang
Applied Materials Inc.
George Patricia A
Moser IP Law Group
Norton Nadine G.
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