Selective etch process

Details Selective etch process Selective etch process

1996-01-22

1997-07-29

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566511, 1566571, 15665911, 216 67, 252 791, H01L 2100

Patent

active

056518560

ABSTRACT:
Disclosed is an etch process wherein hydrogen monoiodide (HI) ions are employed to bombard a patterned film, thereby creating geometric features in the patterned film with substantially anisotropic sidewalls. The etch process has a high selectivity to oxide, allowing the etch process to terminate on a thin pad oxide, especially when using a two step etch process. The etch process is also highly selective to photoresist, further enhancing the resulting anisotropic nature of the geometrical feature sidewalls.

REFERENCES:
patent: 4040892 (1977-08-01), Sargent et al.
patent: 4708766 (1987-11-01), Hynecek
patent: 5277750 (1994-01-01), Frank
patent: 5338395 (1994-08-01), Keller et al.

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