Selective etch for uniform metal trace exposure and milling...

Details Selective etch for uniform metal trace exposure and milling... Selective etch for uniform metal trace exposure and milling...

2006-04-18

2006-04-18

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S075000, C438S712000, C438S725000, C250S492300

Reexamination Certificate

active

07029595

ABSTRACT:
A system and method for exposing and/or milling a copper metallization layer disposed in dielectric that may have an overlying polyimide layer preferably by use of a FIB machine system used for exposing/milling aluminum metallization layers is disclosed. The method includes using a gas assisted (GAS) system for exposing a portion of a copper metal trace disposed in a dielectric and includes the step of removing a portion of the dielectric overlying the portion of the metal trace using the GAS system activated with a dielectric selective chemical that does not have a significant spontaneous (non ion-beam induced) reaction with the metal trace. The system includes a focused ion beam (FIB) machine for exposing/milling a portion of a metal trace disposed in a dielectric substrate wherein the metal trace is copper.

REFERENCES:
patent: 5616921 (1997-04-01), Talbot et al.
patent: 5840630 (1998-11-01), Cecere et al.
patent: 6407001 (2002-06-01), Scott
patent: 6730237 (2004-05-01), Sievers et al.
patent: 6806198 (2004-10-01), Ring et al.

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