Selective epitaxy vertical integrated circuit components and...

Details Selective epitaxy vertical integrated circuit components and... Selective epitaxy vertical integrated circuit components and...

2009-04-06

2010-12-14

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S173000, C438S206000, C438S211000, C438S212000, C438S268000, C438S270000

Reexamination Certificate

active

07851309

ABSTRACT:
Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of the component body.

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