Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-12
2006-09-12
Nguyen, Ha Tran (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S692000
Reexamination Certificate
active
07105399
ABSTRACT:
Gate electrodes with selectively tuned channel thicknesses are formed by selective epitaxial growth. Embodiments include forming shallow trench isolation regions in an SOI substrate, selectively removing the nitride stop layer and pad oxide layer in an exposed particular active region, and implementing selective epitaxial growth to increase the thickness of the semiconductor layer in the particular active region. Subsequently, the remaining nitride stop and pad oxide layers in other active regions are removed, gate dielectric layers formed, as by thermal oxidation, and the transistors completed.
REFERENCES:
patent: 6617226 (2003-09-01), Suguro et al.
patent: 2003/0068860 (2003-04-01), Rabkin et al.
Bonser Douglas
Brown David
Dakshina-Murthy Srikanteswara
Meer Hans Van
Advanced Micro Devices , Inc.
Nguyen Ha Tran
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