Selective epitaxial growth for tunable channel thickness

Details Selective epitaxial growth for tunable channel thickness Selective epitaxial growth for tunable channel thickness

2006-09-12

2006-09-12

Nguyen, Ha Tran (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S692000

Reexamination Certificate

active

07105399

ABSTRACT:
Gate electrodes with selectively tuned channel thicknesses are formed by selective epitaxial growth. Embodiments include forming shallow trench isolation regions in an SOI substrate, selectively removing the nitride stop layer and pad oxide layer in an exposed particular active region, and implementing selective epitaxial growth to increase the thickness of the semiconductor layer in the particular active region. Subsequently, the remaining nitride stop and pad oxide layers in other active regions are removed, gate dielectric layers formed, as by thermal oxidation, and the transistors completed.

REFERENCES:
patent: 6617226 (2003-09-01), Suguro et al.
patent: 2003/0068860 (2003-04-01), Rabkin et al.

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