Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1991-04-01
1997-04-08
Breneman, R. Bruce
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
216 37, 438596, 438792, 438780, H01L 21208
Patent
active
056183798
ABSTRACT:
Disclosed is a process for depositing a conformal polymer coating on selected areas of a silicon substrate. The substrate is first exposed through a mask to a gaseous plasma so as to form a film of desired pattern, the plasma comprising a compound having strong electron donating characteristics. Then, the patterned film and the remaining substrate not covered by the film are exposed to the vapor of a monomer, which condenses and polymerizes on the exposed substrate surfaces, but not on the film. The film serves to inhibit substantial deposition of the coating, so as to provide a selective deposition, where the coating is formed only on those areas of the substrate where desired.
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Armacost Michael D.
Grundon Steven A.
Harmon David L.
Nguyen Son V.
Rembetski John F.
Breneman R. Bruce
International Business Machines - Corporation
Ronda Mara
Sabo William D.
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