Selective deposition process

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 37, 438596, 438792, 438780, H01L 21208

Patent

active

056183798

ABSTRACT:
Disclosed is a process for depositing a conformal polymer coating on selected areas of a silicon substrate. The substrate is first exposed through a mask to a gaseous plasma so as to form a film of desired pattern, the plasma comprising a compound having strong electron donating characteristics. Then, the patterned film and the remaining substrate not covered by the film are exposed to the vapor of a monomer, which condenses and polymerizes on the exposed substrate surfaces, but not on the film. The film serves to inhibit substantial deposition of the coating, so as to provide a selective deposition, where the coating is formed only on those areas of the substrate where desired.

REFERENCES:
patent: 3342754 (1967-09-01), Gorham
patent: 3895135 (1975-07-01), Hofer
patent: 3900600 (1975-08-01), Spaulding
patent: 4299866 (1981-11-01), Clark et al.
patent: 4576834 (1986-03-01), Sobczak
patent: 4743327 (1988-05-01), DeHaan et al.
patent: 4784881 (1988-11-01), Fiore et al.
"Some Mechanical and Electrical Properties of Polyfluoro-p-Xylylene Films Prepared by Chemical Vapor Deposition", J. of Applied Polymer Science, vol. 40, 1795-1800 (1990).
"Proceedings Of The Seventh Symposium On Plasma Processing", The Electrochem. Soc., Proceedings, vol. 88-22 (1988), pp. 59-66.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Selective deposition process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective deposition process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective deposition process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2395697

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.