Selective deposition of silicon-containing films

Details Selective deposition of silicon-containing films Selective deposition of silicon-containing films

2006-01-30

2010-10-19

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S482000, C438S488000

Reexamination Certificate

active

07816236

ABSTRACT:
Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

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