Selective deposition of polycrystalline silicon

Details Selective deposition of polycrystalline silicon Selective deposition of polycrystalline silicon

1990-09-04

1992-01-14

Pianalto, Bernard

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427294, 427314, C23C 1600

Patent

active

050809334

ABSTRACT:
A method for selectively depositing polysilicon on a semiconductor surface (13) is accomplished by preparing the surface (13) in a manner to provide a contamination free surface. The contamination free semiconductor surface is placed into a chemical vapor deposition reactor. The semiconductor surface (13) is exposed to a single crystal inhibitor gas to prevent formation of single crystal silicon on surface (13). Semiconductor surface (13) is then exposed to a silicon containing gas with a hydrogen source to form the polysilicon.

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