Selective contact formation using masking and resist...

Details Selective contact formation using masking and resist... Selective contact formation using masking and resist...

2006-04-25

2009-11-24

Norton, Nadine (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S689000, C257S315000

Reexamination Certificate

active

07622389

ABSTRACT:
A method for manufacturing a semiconductor device including selective conductive contacts includes the step of depositing a resist over first and second memory device components, each of the first and second components comprising junctions formed in the substrate and a gate formed on the substrate between the junctions. The resist is then removed from the second components to thereby form a resist opening above each of the second component control gates and junctions. The resist is then etched to thereby expose each of the first component control gates but not the substrate surrounding the first component control gates. Conductive contacts are then formed on the exposed first component control gates, and the second component control gates and junctions.

REFERENCES:
patent: 5233215 (1993-08-01), Baliga
patent: 6744105 (2004-06-01), Chen et al.
patent: 2005/0269624 (2005-12-01), Hu et al.

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