Selective CMP of in-situ deposited multilayer films to enhance n

Details Selective CMP of in-situ deposited multilayer films to enhance n Selective CMP of in-situ deposited multilayer films to enhance n

1995-03-03

1996-10-01

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566521, 1566551, 1566531, 1566571, 437228, H01L 2100

Patent

active

055608027

ABSTRACT:
A structure and method for chemical-mechanical polishing of a semiconductor body (100) having topographical steps (102) on a surface thereof. A first film (104) having a first CMP removal rate is deposited over the surface of a semiconductor body (100). A second film (106) having a second CMP removal rate is deposited over the first film (104). The second removal rate is not equal to the first removal rate. CMP is performed on the semiconductor body (100) such that the first film (104) is initially exposed only over the topographical steps (102). CMP continues until the semiconductor body (100) has a planarized surface. Because one of the films (104, 106) has a high removal rate and the other (106,104) has a low removal rate, a CMP process is provided requiring less time and having better process uniformity and process latitude.

REFERENCES:
patent: 4708770 (1987-11-01), Pasch
patent: 5169491 (1992-12-01), Doan
patent: 5272117 (1993-12-01), Roth et al.
patent: 5290396 (1994-03-01), Schoenborn et al.
patent: 5395801 (1995-03-01), Doan et al.

Affiliated with

Also associated with

Rating

Selective CMP of in-situ deposited multilayer films to enhance n does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective CMP of in-situ deposited multilayer films to enhance n, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective CMP of in-situ deposited multilayer films to enhance n will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1499904