Selective channel implantation for forming semiconductor...

Details Selective channel implantation for forming semiconductor... Selective channel implantation for forming semiconductor...

2007-08-28

2007-08-28

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C257SE29130

Reexamination Certificate

active

10857931

ABSTRACT:
Multiple semiconductor devices are formed with different threshold voltages. According to one exemplary implementation, first and second semiconductor devices are formed and doped differently, resulting in different threshold voltages for the first and second semiconductor devices.

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