Selective area diffusion control process

Details Selective area diffusion control process Selective area diffusion control process

1999-01-06

2000-10-17

Fourson, George

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438569, 438 47, H01L 2122

Patent

active

061331252

ABSTRACT:
A method for altering a dopant front profile of a dopant in a wafer is disclosed. An initial wafer is provided with an upper doped layer and a lower undoped layer. An oxide layer is grown over a portion of the wafer while a second portion of the wafer remains oxide-free. The wafer is then exposed to a substantially non-growth enhancement diffusion environment that contains the dopant at a given flow rate, but lacks additional materials which would cause growth on the exposed portions of wafer. After a predetermined amount of diffusion is allowed to occur, the wafer is removed from the diffusion environment and the oxide layer is removed.

REFERENCES:
patent: 4374867 (1983-02-01), Nahory et al.
patent: 5580818 (1996-12-01), Sakata
patent: 5930660 (1999-07-01), Davis

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