4. Semiconductor device manufacturing: process
  5. Introduction of conductivity modifying dopant into...
  6. Diffusing a dopant

Michael Geva

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Application of InAIAs double-layer to block dopant...

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate

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Diffusion barrier spikes for III-V structures

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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Dopant diffusion barrier layer for use in III-V structures

Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate

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Dopant diffusion blocking for optoelectronic devices using...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate

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Doping control in selective area growth (SAG) of InP epitaxy...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Profile ID: LFUS-PAI-P-696879

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