Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-11-13
2007-11-13
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S189070, C365S189090, C365S211000
Reexamination Certificate
active
11127743
ABSTRACT:
A non-volatile memory system is programmed so as to reduce or avoid program disturb. In accordance with one embodiment, multiple program inhibit schemes are employed for a single non-volatile memory system. Program inhibit schemes are selected based on the word line being programmed. Certain program inhibit schemes have been discovered to better minimize or eliminate program disturb at select word lines. In one embodiment, selecting a program inhibit scheme includes selecting a program voltage pulse ramp rate. Different ramp rates have been discovered to better minimize program disturb when applied to select word lines. In another embodiment, the temperature of a memory system is detected before or during a program operation. A program inhibit scheme can be selected based on the temperature of the system.
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Chen Jian
Gongwer Geoffrey S.
Hemink Gerrit Jan
Higashitani Masaaki
Lutze Jeffrey
Elms Richard T.
Nguyen N
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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